Use Our ProductsConfererence Papers
Symposium Articles
High Linearity 40 Watt, 28V InGaP/GaAs HBT
Presented at the 2008 The International Microwave Symposium (MTT-S), Atlanta, GA
Wenlong Ma, Xiaopeng Sun, Peter Hu, Jingshi Yao, Barry Lin, Hin-Fai Chau, Louis Liu, and Chien-Ping Lee, June 2008, 4 pages.
This paper reports on a 40W high linearity InGaP/ GaAs 28V HBT. It uses a high breakdown voltage, high ruggedness HBT process developed by TriQuint-WJ. The device employs a dynamic bias circuit to improve ACLR under WCDMA modulation conditions. The P-1dB of the device reaches 46dBm (40W), with a gain around 14.5dB. With WCDMA one carrier modulation (PAR=8.5dBc), the device achieves an ACLR of -50dBC and an efficiency of 19.5% at an output power of 37.5dBm (5.6W) at 920-960MHz frequency band. Without the help of a DPD, the performance of this device will make it an excellent choice for base station and repeater applications.
A Scalable High Power Nonlinear HBT Model for a 28V HVHBT
Presented at the 2008 The International Microwave Symposium (MTT-S), Atlanta, GA
Xiangkun Zhang, Frank Chau, Barry Lin, Xiaopeng Sun, Wenlong Ma, Peter Hu, Jingshi Yao, and Chien-Ping Lee, June 2008, 4 pages.
A scalable nonlinear HBT model for a Building Block (1BB) of 28V InGaP/GaAs HBT is presented. It is based on the AgilentHBT (AHBT) model. The building block consists of 32 finger HBTs, an input pre-matching circuit and a transistor used as an emitter follower in the related bias circuit. The P1dB of 1BB is 32.5dBm. The model can account not only for DC, thermal, junction capacitances, S-parameters but also RF power, gain, IM3, operation current and collector efficiency. A good match between simulation and measurement has been achieved. By using a multiplicity parameter the model can accurately predict the DC and nonlinear RF performance of two Building Blocks (64 fingers, P1dB of 35.7dBm) and four Building Blocks (128 fingers, P1dB of 38.2dBm).
Failure Analysis of CDM ESD Damage in a GaAs RFIC
Presented at the 2000 International Symposium for Testing and Failure Analysis, Bellevue, WA
Amy Poe, Steve Brockett, and Tony Rubalcava, November 2000, 6 pages.
This publication presents the importance of Charged Device Model (CDM) ESD testing for radio
frequency devices. A novel deprocessing technique is described for laser induced delayering as
well as various ESD measurements.
Humidity Resistance of GaAs ICs
Presented at the 1994 GaAs IC Symposium, Philadelphia, PA
Bill Roesch, October 1994, 4 pages.
A series of investigations into reliability effects of moisture on GaAs structures have lead
to the conclusion that GaAs devices have resistance to degradation effects of humidity. This
paper provides evidence that GaAs devices are ready for low-cost non-hermetic packages and GaAs
ICs may have superior reliability performance compared to silicon devices under accelerated
humidity conditions.
GaAs IC Reliability, The Next Generation
Presented at the 1993 GaAs IC Symposium, San José, CA
Bill Roesch, October 1993, 4 pages.
A historical perspective is presented which provides evidence regarding changes in the
way people think about reliability, for GaAs MesFET integrated circuits in particular.
Comparisons to silicon reliability history, and between old and new philosophies are made.
Long-Term Effects of Sidegating On GaAs MesFETs
Presented at the 1992 International Reliability Physics Symposium, San Diego CA
Hema Cholan, Douglas Stunkard, Tony Rubalcava, March 1992, 5 pages.
An impediment to widespread VLSI implementation of GaAs devices is sidegating. Several
processing and design variations which influence circuit immunity to sidegating are examined
over the lifetimes of MesFETs. Conclusive evidence shows that sidegating effects will not
grow worse as devices wear out.
Thermo-Reliability Relationships of GaAs ICs
Presented at the GaAs IC Symposium, Nashville, TN
Bill Roesch, November 1988, 4 pages.
Thermal conductivity and failure mechanism activation energies are key parameters
for determining reliable operation of GaAs ICs. The liquid crystal, diode drop, and
infrared temperature measurement techniques are discussed.
Lack Of Latent and Cumulative ESD Effects On MesFET-Based GaAs ICs
Presented at the EOS/ESD Symposium, Anaheim, CA
Tony Rubalcava & Bill Roesch, September 1988, 3 pages.
The purpose of this study is to demonstrate that GaAs IC structures have no latent or
cumulative effects from ESD pulsing. These findings are of significance because GaAs devices
can offer an advantage over MOSFET-based silicon ICs which are susceptible to latent damage
resulting in degradation or field failures.
Gallium Arsenide IC Reliability
Tutorial Presentation at the International Reliability Physics Symposium, Monterey, CA
Bill Roesch, April 1988, 12 pages.
This tutorial provides an overview of MesFET IC reliability technology. It includes
information on thermal resistance, failure mechanisms, packaging, GaAs failure analysis,
ESD and radiation performance. A systematic program of reliability growth is explained,
and the general level of GaAs IC reliability is presented. Comparisons are made with
silicon technology.
Depletion Mode GaAs IC Reliability
Presented at the GaAs IC Symposium, Portland, OR
Bill Roesch & Michael F. Peters, October 1987, 4 pages
This work presents results of digital MSI and MMIC reliability testing. Element
test correlations are made. A comparison of IC and element median lives reveals a
non-linear relationship between integration and reliability. General improvements
of GaAs device reliability over time are indicated.
ElectroStatic Discharge Effects on GaAs ICs
Presented at the EOS/ESD Symposium, Las Vegas, NV
Anthony L. Rubalcava, Douglas Stunkard, and Bill Roesch, September 1986, 7 pages.
The ESD susceptibility of individual GaAs circuit elements and ICs is investigated in
detail by this paper. The evaluation was made using a human body model ESD simulator which
applied over 8,000 zaps to nearly 300 different GaAs structures. Eight conclusions are made.
Reliability Investigation of 1 Micron Depletion Mode IC MesFETs
Presented at the International Reliability Physics Symposium, Anaheim, CA
Dominic Ogbonnah & Arthur Fraser, April 1986, 6 pages.
This paper describes testing on MesFETs with details on analysis and determination
of failure mechanisms. Early accelerated lifetesting is discussed.
Workshop Articles
Getting to Zero – Methods of Reducing Defects
Presented at the 2001 GaAs REL Workshop, Baltimore, MD
Bill Roesch, October 2001, 6 pages.
This publication is a summary of methodology and ten separate improvement
examples for improving quality.
Volume & Quality Impacts on Reliability: A New Game for GaAs
Presented at the 2000 GaAs REL Workshop, Seattle, WA
Bill Roesch, November 2000, 5 pages.
This publication provides information on the causes of reliability failure
in actual use and the activities that can really improve reliability. The effect
of volume on determining failure causes and corrective action is investigated.
Thermal Excursion Accelerating Factors
Presented at the 1999 GaAs REL Workshop, Atlanta, GA
Bill Roesch, October 1998, 5 pages.
This publication provides information on a failure mechanism that is accelerated
by thermal excursions instead of high temperatures. The failure mechanism is
described and acceleration factors are investigated.
Process Reliability Qualification Experiences During a Fab Relocation
Presented at the 1998 GaAs REL Workshop, Atlanta, GA
Bill Roesch, Susan Bumgarner, Lita O. Monaghan, Tony Rubalcava,
Denise Riley, Donna Cruse, Jim Cartwright, October 1998, 4 pages.
This publication provides information on the methodology, implementation, and results of
reliability assessments enacted as part of a new facility qualification.
Light Emission as an Analysis Tool for GaAs ICs
Presented at the 1996 GaAs REL Workshop, Orlando, FL
Bill Roesch, October 1996, 4 pages.
This publication demonstrates how light emission microscopy can be used to
analyze GaAs ICs during characterization, degradation, and wearout.
GaAs IC Reliability in Plastic Packages
Presented at the 1995 GaAs REL Workshop, San Diego, CA
Bill Roesch, October 1995, 6 pages.
The intent of this series of investigations is to demonstrate the immunity of GaAs IC
technology to reliability degradation in plastic packaging. For example: worst-case
scenarios are used to show complete immunity to high humidity environments.
Additionally, typical package evaluation testing is demonstrated as part of an
industry standard set of package-related qualification tests.
Accelerated Effects of Hydrogen on GaAs MesFETs
Presented at the 1994 GaAs REL Workshop, Philadelphia, PA
Bill Roesch, October 1994, 6 pages.
Several experiments were conducted which have all indicated that moderate
to high levels of hydrogen causes distinct changes in MesFETs under accelerated
temperatures. The changes were found to be generally opposite of those previously
reported for hydrogen degradation on GaAs devices. The changes also took
significantly longer to manifest than has been reported for hydrogen degradation.
GaAs IC Reliability Qualification by Levels
Presented at the Advanced Microelectronic Qualification/Reliability Workshop, Newton, MA
Bill Roesch, August 1994, 3 pages.
New methods will have to be developed in order to assure adequate qualification of ICs.
This publication describes several aspects of GaAs device reliability which are overlooked.
This discussion describes multiple scenarios of reliability qualification options.
Measuring GaAs Temperatures: Round Robin Results
Presented at the 1993 GaAs REL Workshop, San José, CA
Bill Roesch, October 1993, 4 pages.
A thermal test die was designed and distributed to 13 companies interested in measuring
GaAs thermal resistance. The findings indicate that thermal resistance is not measured
uniformly among companies working with GaAs devices.
Burn-in of GaAs ICs
Presented at the 1992 GaAs REL Workshop, Miami Beach, FL
Bill Roesch, October 1992, 2 pages.
This discussion offers data in the following four areas indicating why burn-in should
not be performed on GaAs ICs: 1) GaAs devices have no early failures, 2) The failure
mechanisms of GaAs and Si ICs are different, 3) Burn-in reduces GaAs lifetimes, and
4) Burn-in reduces GaAs mechanical quality.
GaAs IC Reliability Returns: A Story of Abuse
Presented at the 1992 GaAs REL Workshop, Miami Beach, FL
Bill Roesch, Tony Rubalcava, and Ross Winters, October 1992, 4 pages.
Device application has been largely ignored as a factor influencing reliability.
Application effects are investigated through examination of several aspects of field
returns. The results of compiling all the reliability returns for six years of are
presented and a guide for GaAs IC application is suggested.
A Novel Circuit Design for GaAs Thermal Test Dice
Presented at the 1991 GaAs REL Workshop, Monterey, CA
Bill Roesch, October 1991, 4 pages.
Thermal test dice are used to evaluate IC assemblies. This circuit incorporates
several new features, for example, an array of heaters or power dissipation elements.
The array offers distinct advantages over designs using fewer, large heating resistors,
for example, void or anomaly detection in the die attach or package material.
Finding Low Activation Energy Failure Mechanisms
Presented at the Advanced Microelectronics Technology Qualification, Reliability, and Logistics Workshop, Seattle WA
Bill Roesch, August 1991, 4 pages.
This study addresses the low activation energy possibility by describing six
different methodologies. Results of millions of test hours and analysis of field
returns indicate that low activation energy failure mechanisms are very unlikely
for gallium arsenide devices.
Burn-In For GaAs ICs: Another $600 Hammer?
Presented at the Advanced Microelectronics Technology Qualification, Reliability & Logistics Workshop, Seattle WA
Richard Allen, Brian Bird, and Patrick Hamilton, August 1991, 6 pages.
This paper presents the results of a nine-month, 100% burn-in program. Over 5000
digital GaAs ICs were submitted to the screen. The paper considers the economics of
burn-in, and suggests a generalized way to evaluate the cost-benefit tradeoffs of
specifying 100% burn-in.
Reliability Characterization of A Production GaAs MMIC Amplifier Methodology and Results
Presented at the GaAs REL Workshop, Nashville, TN
Michael F. Peters & Tony Rubalcava, November 1988, 2 pages.
This report details the methodology of GaAs MMIC reliability prediction and
presents results from reliability tests. Included are descriptions of high
frequency/high temperature fixturing, thermal analysis, step stress testing,
accelerated lifetesting, ESD testing, radiation testing, package testing,
and failure analysis.
Conference Articles
Assessing Circuit Hermeticity by Electrolysis
Presented at the 2000 GaAs Mantech Conference, Washington DC
Bill Roesch, Shawn Peterson, Amy Poe, Steve Brockett, Steve Mahon, and Jim Bruckner,
This work describes a corrective action project to improve circuit hermeticity. The objective
was to provide quick feedback on experiments to improve performance in biased humidity environments.
Hermeticity was evaluated quickly by using current flow (electrolysis) in water applied directly to
the surface of the devices. Weaknesses in device construction were discovered, and effective solutions
were evaluated, by using the electrolysis technique.
Moisture Resistance of GaAs ICs: Breaking the 5,000 PPM Barrier
Presented at the 1993 Government Microcircuits Applications Conference (GOMAC),
Bill Roesch & Bharati Ingle, November 1993, 3 pages.
This report summarizes engineering test results obtained on a 132 pin multilayer ceramic cavity packages
with custom GaAs ASIC devices. The testing was developed to intentionally induce worst case conditions
that exceed any environments expected under normal use. The results provide conclusive evidence that
high moisture content does not affect GaAs devices electrically or visually.
Assessing Reliability of GaAs Substrate Vias
Presented at the 1992 GaAs MANTECH Conference, San Antonio, TX
Bill Roesch, April 1992, 4 pages.
These test results indicate that wet-etch and laser-drilled vias are not susceptible to mechanical
damage induced by thermal cycling and thermal shock. Novel structures are successful at detecting
cracks and are also useful in assessing via over-etching.
Reliability Of Plastic Packaging For GaAs ICs
Presented at the MANTECH Conference, Reno, NV
Bill Roesch, Tony Rubalcava, and Bharati Ingle, April 1990, 4 pages.
This study summarizes preliminary feasibility evaluations on GaAs FETs and ICs encapsulated in
plastic packages. These initial results indicate that GaAs devices can be manufactured in plastic
and can reliably withstand moisture penetration and thermal excursions.
Predicting GaAs Reliability With Accelerated Testing
Invited Paper, presented at the MANTECH Conference, Reno, NV
Bill Roesch and Richard Allen, April 1990, 1 page Abstract.
This abstract briefly discusses the problems of applying MIL-HDBK-217.
Proving GaAs Reliability With IC Element Testing
Presented at the MANTECH Conference, Nashville, TN
Bill Roesch & Doug Stunkard, November 1988, 5 pages.
This study identifies element testing used for investigating GaAs circuit reliability. Data on 4,241
ohmic contacts, thin film resistors, metallization interconnects, and MesFETs is presented in a
condensed format. Correlation to IC data is made.